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MOS, SOI and FinFET Technology

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The invention of vacuum tubes is what launched the electronics industry. These devices would control the flow of electrons in vacuum. But, after the second world war, it was observed that due to a huge number of discrete components, the complexity and power consumption of these devices were increasing significantly. As a result, the performance of the devices would keep going down. One of the examples is of a Boeing B-29 which during the war, would consist of 300-1000 vacuum tubes. Each additional component would reduce the reliability and increase troubleshooting time. A major breakthrough came in 1947, when John Baden, William Shockley and Watter Brattain of Bell labs unveiled the first functioning point contact Germanium transistor. In 1950, Shockley developed the first Bipolar Junction Transistor (BJT). In comparison to a vacuum tube, transistors are more reliable, power efficient and of lesser size. The transistor is a 3-terminal device which can be viewed as an electrically contr...

Difference between NMOS PMOS and CMOS transistors

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  Difference between NMOS PMOS and CMOS transistors NMOS is constructed with the n-type source and drain and a p-type substrate, while PMOS is constructed with the p-type source and drain and an n-type substrate. In an NMOS, carriers are electrons, while in a PMOS carrier are holes. Where CMOS is the combination of NMOS and PMOS. CMOS technology uses less energy to operate at the same output and produces less noise during operation. There are two most popular  MOS (Metal Oxide Semiconductor)  technologies namely  CMOS  and  NMOS  which are widely used in the field electronics and power electronics such as in ASICs, memories, processors, etc. Nowadays, the CMOS technology is one of the leading semiconductor technology. It is because the CMOS technology dissipates less power when compared to the bipolar and NOMOS technology. In this tutorial, we will discuss the major  differences between CMOS technology and NMOS   technology . But before dis...

CMOS (Complementary Metal-Oxide-Semiconductor)

CMOS  What is the full form of CMOS? The full form of CMOS is  Complementary Metal-Oxide-Semiconductor.  CMOS is an integrated circuit built on a printed circuit board. It is a battery-powered memory chip that effortlessly holds the initialisation data. The BIOS uses this data to turn on the device, i.e., during the bootup process. The complementary word refers to the user charge, that is, either PMOS (positive MOS) or NMOS (negative MOS). CMOS utilises one charge at a time. CMOS consumes less power since charges can remain for a prolonged period of time in one phase and, therefore, only consume energy whenever necessary. Transistors focused on CMOS do not heat up and yield a high speed. Why Do You Use CMOS? As stated above, CMOS abbreviation is used to design the Integrated Circuit. This technology is applied in microprocessors, static RAM, digital logic circuits, and microcontrollers. The key features of Complementary Metal Oxide Semiconductor technology are elevated no...

MOSFET - Metal Oxide Silicon Field Effect Transistors

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MOSFET - Metal Oxide Silicon Field Effect Transistors MOSFETs or Metal Oxide Silicon Field Effect Transistors, were invented to overcome the disadvantages posed by FETs, such as the slow operation, high drain resistance, and moderate input impedance. In this article, let us learn about the basics of MOSFET. Table of Contents MOSFET Basics MOSFET Types MOSFET Operating Regions MOSFET as a Switch MOSFET Applications Frequently Asked Questions on MOSFET MOSFET Basics What Is a MOSFET? Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used to switch or amplify voltages in circuits. It is a voltage-controlled device and is constructed by three terminals. The terminals of MOSFET are named as follows: Source Gate Drain Body The figure shows a practical MOSFET. MOSFET Construction The circuit of MOSFET is typically represented as follows: The p-type semiconductor forms the base of the MOSFET. The two types of the base are highly doped with an n-type ...